B772-GR Просмотр технического описания (PDF) - Micro Commercial Components
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B772-GR Datasheet PDF : 2 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
• Halogen free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
V (BR)CBO
V (BR)EBO
I CBO
ICEO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-100uAdc, IC=0)
Collector Cutoff Current
(VCB=-40Vdc, IE=0)
Collector Cutoff Current
(VCE=-30Vdc, IB=0)
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
-30
---
Vdc
-40
---
Vdc
-6.0
---
Vdc
---
-1.0
uAdc
---
-10 uAdc
---
-1.0 uAdc
h FE(1)
V CE(sat)
V BE(sat)
DC Current Gain
(IC=-1.0Adc, VCE=-2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc)
Base-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc)
60
400
---
---
-0.5
Vdc
---
-1.5
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(I C=-0.1Adc, VCE=-5.0Vdc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
B772-R
B772-O
B772-Y
B772-GR
PNP Silicon
Plastic-Encapsulate
Transistor
DPAK
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
Q
A
L
B
D
PIN 1. BASE
PIN 2.4 COLLECTOR
PIN 3. EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.087
0.094
2.20
2.40
B
0.000
0.005
0.00
0.13
C
0.026
0.034
0.66
0.86
D
0.018
0.023
0.46
0.58
E
0.256
0.264
6.50
6.70
F
0.201
0.215
5.10
5.46
G
0.190
4.83
H
0.236
0.244
6.00
6.20
I
0.086
0.094
2.18
2.39
J
0.386
0.409
9.80
10.40
K
0.114
2.90
L
0.055
0.067
1.40
1.70
M
0.063
1.60
O
0.043
0.051
1.10
1.30
Q
0.000
0.012
0.00
0.30
V
0.211
5.35
Revision: B
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