2N6282 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N6282 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6282 2N6283 2N6284
DESCRIPTION
·With TO-3 package
·Complement to type 2N6285/6286/6287
·High DC current gain
·DARLINGTON
APPLICATIONS
·For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N6282
VCBO
Collector-base voltage 2N6283
2N6284
2N6282
VCEO
Collector-emitter voltage 2N6283
2N6284
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
100
60
80
100
5
20
40
0.5
160
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
1.09
UNIT
℃/W
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