2SD1949T106Q Просмотр технического описания (PDF) - ROHM Semiconductor
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2SD1949T106Q Datasheet PDF : 3 Pages
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Transistors
2SD1949 / 2SD1484K
Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
Features
1) High current.(IC=0.5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Absolute maximum rationgs (Ta=25 C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
0.5
A
PC
0.2
W
Tj
150
C
Tstg
−55 to +150
C
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min. Typ. Max. Unit
Conditions
50
−
−
V IC=100µA
50
−
−
V IC=1mA
5
−
−
V IE=100µA
−
−
0.5
µA VCB=30V
−
−
0.5
µA VEB=4V
120
−
390
− VCE/IC=3V/10mA
−
−
0.4
V
IC/IB=150mA/15mA
−
250
−
MHz VCE=5V , IE= −20mA , f=100MHz
−
6.5
−
pF VCB=10V , IE=0A , f=1MHz
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pleces)
2SD1949
UMT3
QR
Y
T106
3000
Danotes hFE
2SD1484K
SMT3
QR
Y
T146
3000
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Rev.D
1/2
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