LL4150 Просмотр технического описания (PDF) - General Semiconductor

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LL4150

Small Signal Diodes

General Semiconductor 

LL4150

Small Signal Diodes

MiniMELF

Cathode Mark

.142 (3.6)

.134 (3.4)

.019 (0.48)

.011 (0.28)

FEATURES

♦ Silicon Epitaxial Planar Diodes

♦ For general purpose and switching

♦ This diode is also available in other case

styles including the DO-35 case with the type

designation 1N4150 and the SOD-123 case

with the type designation 1N4150W.

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Value

Unit

Peak Reverse Voltage

VRM

50

V

Maximum Average Rectified Current

I0

200

mA

Maximum Power Dissipation at Tamb = 25 °C

Ptot

500

mW

Maximum Junction Temperature

Tj

200

°C

Maximum Forward Voltage Drop at IF = 200 mA

VF

1.0

V

Maximum Reverse Current at VR = 50 V

IR

100

nA

Max. Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF trr

4.0

ns

4/98

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