BB304M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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BB304M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

BB304M

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Input capacitance

c iss

Output capacitance

c oss

Reverse transfer capacitance crss

Drain current

ID(op) 1

2.3

0.9

0.003

9

Typ

2.8

1.3

0.02

15

ID(op) 2

—

13

Forward transfer admittance |yfs|1 22

27

|yfs|2

—

27

Power gain

PG1 24

29

PG2 —

29

Noise figure

NF1 —

1.2

NF2 —

1.2

Max

3.6

2.0

0.05

19

—

34

—

32

—

1.9

—

Unit

pF

pF

pF

mA

mA

mS

mS

dB

dB

dB

dB

Test Conditions

VDS = 5V, VG1 = 5V, VG2S =4V

RG = 180kΩ, f = 1MHz

VDS = 5V, VG1 = 5V, VG2S = 4V

RG = 180kΩ

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 470kΩ

VDS = 5V, VG1 = 5V, VG2S =4V

RG = 180kΩ, f = 1kHz

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 470kΩ, f = 1kHz

VDS = 5V, VG1 = 5V, VG2S =4V

RG = 180kΩ, f = 200MHz

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 470kΩ, f = 200MHz

VDS = 5V, VG1 = 5V, VG2S =4V

RG = 180kΩ, f = 200MHz

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 470kΩ, f = 200MHz

3

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