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Компоненты Описание
BB304M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB304M
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
BB304M Datasheet PDF : 12 Pages
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Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
mbient Temperature Ta (°C)
BB304M
Typical Output Characteristics
25
V
G2S
= 6 V
V
G1
= V
DS
20
15
10
5646
8
780
2
00
0
kkk
k
WWW
W
5
1M
W
R
G
= 1.5 M
W
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain Current vs.
Gate2 to Source Voltage
25
V
DS
= V
G1
= 9 V
20
270
k
W
330
k
W
15
390
k
W
10
470
k
W
560
k
W
680
k
W
5
820
k
W
1M
W
R
G
= 1.5 M
W
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage V
G2S
(V)
Drain Current vs. Gate1 Voltage
25
V
DS
= 9 V
R
G
= 390 k
W
20
6V
5V
15
4V
10
3V
2V
5
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
5
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