BB304M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
BB304M Datasheet PDF : 12 Pages
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Forward Transfer Admittance
vs. Gate1 Voltage
30
V DS = 9 V
R G = 560 k W
6V 5V 4V
24 f = 1 kHz
18
3V
2V
12
6
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
BB304M
Power Gain vs. Gate Resistance
40
35
30
25
20
V DS = 9 V
15
V G1= 9 V
V G2S = 6 V
f = 200 MHz
10
0.1 0.2 0.5 1 2
5 10
Gate Resistance R G (M W )
Noise Figure vs. Gate Resistance
4
V DS = 9 V
V G1= 9 V
3 V G2S = 6 V
f = 200 MHz
2
1
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance RG (M W)
Power Gain vs. Drain Current
40
35
30
25
20 V DS = 9 V
V G1= 9 V
15
V G2S = 6 V
RG= variable
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current ID (mA)
7
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