BB304M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB304M Datasheet PDF : 12 Pages
| |||
BB304M
Noise Figure vs. Drain Current
4
V DS = 9 V
V G1= 9 V
3
V G2S = 6 V
RG= variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current I D (mA)
Drain Current vs. Gate Resistance
30
25
20
15
10
V DS = 9 V
5 V G1= 9 V
V G2S = 6 V
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance R G (M W)
Gain Reduction vs.
Gate2 to Source Voltage
60
V DS = 9 V
50
V G1= 9 V
V G2S = 6 V
40
RG= 470 k W
f = 200 MHz
30
20
10
0 1 2 34 5 6 7
Gate2 to Source Voltage V G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
6
5
4
3
2
V DS = 9 V
1
V G1= 9 V
RG= 470 k W
f = 1 MHz
0
1
2
3
4
5
6
Gate2 to Source Voltage V G2S (V)
8
Share Link: 