BYV32E-200127 Просмотр технического описания (PDF) - NXP Semiconductors.
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BYV32E-200127 Datasheet PDF : 9 Pages
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BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VRRM
repetitive peak
reverse voltage
IO(AV)
average output
current
IRRM
repetitive peak
reverse current
VESD
electrostatic
discharge voltage
Dynamic characteristics
trr
reverse recovery
time
Static characteristics
VF
forward voltage
Conditions
square-wave pulse; δ = 0.5;
Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
tp = 2 µs; δ = 0.001
HBM; C = 250 pF; R = 1.5
kΩ; all pins
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
IR = 1 A; IF = 0.5 A;
Tj = 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
IF = 8 A; Tj = 150 °C; see
Figure 4
Min Typ Max Unit
-
-
200 V
-
-
20 A
-
-
0.2 A
-
-
8
kV
-
20 25 ns
-
10 20 ns
-
0.72 0.85 V
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