MJ1000 Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
MJ1000 Datasheet PDF : 4 Pages
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MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
IEBO
ICER
VCE(SAT)
Emitter Cutoff Current
VBE=5.0 Vdc, IC=0
MJ900
MJ1000 -
MJ901
MJ1001
VCB=60 V, RBE=1.0 k ohm
MJ900
MJ1000
-
Collector-Emitter Leakage VCB=80 V, RBE=1.0 k ohm
MJ901
MJ1001
-
Current
VCB=60 V, RBE=1.0 k ohm,
TC=150°C
MJ900
MJ1000
-
VCB=80 V, RBE=1.0 k ohm,
TC=150°C
MJ901
MJ1001
-
Collector-Emitter saturation
Voltage (*)
IC=3.0 A, IB=12 mAdc
IC=8.0 A, IB=40 mAdc
MJ900
MJ1000
MJ901
-
MJ1001
MJ900
MJ1000
MJ901
-
MJ1001
- 2.0 mAdc
-
1.0
-
mAdc
-
5.0
-
- 2.0
Vdc
- 4.0
Symbol
Ratings
VF
Forward Voltage (pulse
method)
VBE
Base-Emitter Voltage (*)
HFE
DC Current Gain (*)
Test Condition(s)
IF=3 A
IC=3.0 Adc, VCE=3.0Vdc
VCE=3.0 Vdc, IC=3.0 Adc
VCE=3.0 Vdc, IC=4.0 Adc
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx
- 1.8 -
- - 2.5
1000 -
-
750 -
-
Unit
V
V
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
! ! ! For PNP types current and voltage values are negative ! ! !
Page 3 of 4
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