BSS138 Просмотр технического описания (PDF) - TAITRON Components Incorporated
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BSS138 Datasheet PDF : 7 Pages
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SMD Power MOSFET Transistor (N-Channel)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
V(BR)DSS
VGS(th)
IGSS
Description
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage Current
IDSS
Zero Gate Voltage Drain Current
RDS(ON) Drain-Source On-Resistance
gFS
Forward Transconductance
Min. Typ. Max.
Unit
50
-
-
V
0.5
-
1.5
V
-
-
± 0.1
μA
-
-
0.1
μA
-
-
0.5
μA
-
5.6
10
Ω
-
-
3.5
Ω
100
-
-
mS
BSS138
Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=1mA
VDS=0V, VGS=±20V
VDS=25V, VGS=0V
VDS=50V, VGS=0V
VGS=2.75V, ID<200mA,
TA=-40 to +85 ° C
VGS=5.0V, ID=200mA
VDS=25V, ID=200mA,
f=1.0KHz
Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Ciss
Crss
Coss
ton
toff
Description
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time Turn-On Time
Switching Time Turn-Off Time
Min. Typ. Max.
Unit
-
40
50
-
3.5
5.0
pF
-
12
25
-
-
20
nS
-
-
20
Note: (1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
(2) Switching Time is Essentially Independent of Operating Temperature.
Conditions
VDS=25V, VGS=0V,
f=1MHz
VDD=30V, ID=200mA
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Rev. A/AH
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