MMBT5401LT1G Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MMBT5401LT1G

High Voltage Transistor

ON Semiconductor 

MMBT5401LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −120 Vdc, IE = 0)

(VCB = −120 Vdc, IE = 0, TA = 100°C)

ON CHARACTERISTICS

DC Current Gain

(IC = −1.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −50 mAdc, VCE = −5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Small Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)

Symbol

Min

Max

Unit

V(BR)CEO

Vdc

−150

−

V(BR)CBO

Vdc

−160

−

V(BR)EBO

Vdc

−5.0

−

ICES

−

−50 nAdc

−

−50 mAdc

hFE

−

50

−

60

240

50

−

VCE(sat)

Vdc

−

−0.2

−

−0.5

VBE(sat)

Vdc

−

−1.0

−

−1.0

fT

Cobo

hfe

NF

MHz

100

300

pF

−

6.0

−

40

200

dB

−

8.0

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