G25N120FL2 Просмотр технического описания (PDF) - ON Semiconductor
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G25N120FL2 Datasheet PDF : 10 Pages
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NGTG25N120FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.39
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Min
1200
−
−
4.5
−
−
−
Typ
−
2.00
2.40
5.5
−
−
−
Max
−
2.40
−
6.5
0.4
2
200
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 20 V, VGE = 0 V, f = 1 MHz
VCE = 600 V, IC = 25 A, VGE = 15 V
Cies
Coes
Cres
Qg
Qge
Qgc
−
4420
−
pF
−
151
−
−
81
−
−
178
−
nC
−
39
−
−
83
−
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
td(on)
−
87
−
ns
Rise time
tr
−
74
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V*
td(off)
tf
Eon
−
179
−
−
136
−
−
1.95
−
mJ
Turn−off switching loss
Eoff
−
0.60
−
Total switching loss
Ets
−
2.55
−
Turn−on delay time
td(on)
−
84
−
ns
Rise time
tr
−
94
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V*
td(off)
tf
Eon
−
185
−
−
245
−
−
2.39
−
mJ
Turn−off switching loss
Eoff
−
1.26
−
Total switching loss
Ets
−
3.65
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB25N120FL2WG.
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