G25N120FL2 Просмотр технического описания (PDF) - ON Semiconductor
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G25N120FL2 Datasheet PDF : 10 Pages
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NGTG25N120FL2WG
TYPICAL CHARACTERISTICS
100
90
VGE = 13 V
to 20 V
80
TJ = 25°C
70
60
11 V
50
40
10 V
30
20
9V
10
7V
8V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
100
TJ = 150°C
90
80
70
VGE = 13 V
to 20 V
60
11 V
50
40
10 V
30
9V
20
8V
10
7V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
100
90
VGE = 13 V
to 20 V
80
TJ = −55°C
70
11 V
60
50
40
10 V
30
20
9V
10
0
8V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
45
40
35
30
25
20
15
TJ = 150°C
10
TJ = 25°C
5
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
4.0
10,000
3.5
IC = 50 A
3.0
1000
2.5
IC = 25 A
2.0
100
IC = 15 A
1.5
1.0
10
0.5
0
1
−75 −50 −25 0 25 50 75 100 125 150 175 200
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
Cies
Coes
Cres
TJ = 25°C
10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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