Q62702-C2137 Просмотр технического описания (PDF) - Siemens AG

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производитель

Q62702-C2137

NPN Silicon Darlington Transistors

Siemens AG 

DC current gain hFE = f (IC)

VCE = 10 V

BCP 29

BCP 49

Collector-emitter saturation voltage

IC = f (VCEsat)

hFE = 1000

Collector-base capacitance CCB0 = f (VCB0)

Emitter-base capacitance CEB0 = f (VEB0)

Base-emitter saturation voltage

IC = f (VBEsat)

hFE = 1000

Semiconductor Group

5

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