FQB19N20C_13 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQB19N20C_13 Datasheet PDF : 10 Pages
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FQB19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
• 19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V,
ID = 9.5 A
• Low Gate Charge (Typ. 40.5 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB19N20CTM
200
19.0
12.1
76.0
± 30
433
19.0
13.9
5.5
3.13
139
1.11
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQB19N20CTM
0.9
62.5
40
Unit
oC/W
©2004 Fairchild Semiconductor Corporation
1
FQB19N20C Rev. C1
www.fairchildsemi.com
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