MJ13333 Просмотр технического описания (PDF) - New Jersey Semiconductor

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MJ13333

Silicon NPN Power Transistor

New Jersey Semiconductor 

M J13333 Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0

400

VcE(sat)-!

Collector-Emitter Saturation Voltage

IC=10A;IB=2A

IC=10A;IB=2A,TC=100'C

VcE(sat)-2

VsE(sat)

ICEV

ICER

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Collector Cutoff Current

lc= 20A; IB=6.7A

IC=10A;IB=2A

lc=10A;lB=2A,Tc=10<rC

VcEV=400V;VBE(off)=1-5V

VCEV=400V;VBE(off)=1 .5V;TC=1 50 'C

VCE= 400V; RBE= 50 Q ,TC= 100'C

V

1.8

2.4

V

5

V

1.8

1.8

V

0.25

5.0

mA

5.0 mA

IEBO

Emitter Cutoff Current

VEB= 6V; lc=0

1 mA

hFE

DC Current Gain

lc= 5A ; VCE= 5V

10

60

fr

Current Gain-Bandwidth Product

lc= 0.3A ;VCE= 10V; ftegt=1MHz

5

40 MHz

COB

Output Capacitance

Switching times;Resistive Load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

lE=0;VcB=10V;f,est=1kHz

lc=10A,VCc=250V;lBi=2A

V~BiE-/(omff)— o^vx>/' %t l —iInU H115,c-

Duty Cycle^2.0%

125

500 pF

0.02 0.1 us

0.3 0.7 u s

1.6 4.0 u s

0.3 0.7 w s

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