BLW86 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

BLW86

HF/VHF power transistor

New Jersey Semiconductor 

HFA/HF power transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector-emitter breakdown voltage

VBE = 0; lc = 25 mA

Collector-emitter breakdown voltage

open base; l c = 100 mA

Emitter-base breakdown voltage

open collector; IE = 10 mA

Collector cut-off current

VBE = 0; VCE = 36 V

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

D.C. current gain'1'

lc = 2,5 A; VCE = 5 V

D.C. current gain ratio of matched devices^)

lc = 2,5 A; VCE = 5 V

Collector-emitter saturation voltaget1'

lc = 7,5 A; IB =1,5 A

Transition frequency at f = 100 MHz(1'

-IE = 2,5 A; VCB = 28 V

-IE = 7,5 A; VCB = 28 V

Collector capacitance at f = 1 MHz

IE = la = 0; VCB = 28 V

Feedback capacitance at f = 1 MHz

lc = 100 mA; VCE = 28 V

Collector-flange capacitance

Note

1. Measured under pulse

conditions: tp < 200 us; 8 <0,02.

BLW86

V(BR)CES

V(BR)CEO

V(BR)EBO

ICES

ESBO

ESBR

HFE

VcEs

fT

fT

Cre

Ccf

4—

65 V

36 V

4V

10 mA

8 mJ

8 mJ

typ. 45

10 to 80

<

1,2

typ. 1,5 V

typ. 570 MHz

typ. 570 MHz

typ.

82 pF

typ.

54 pF

typ.

2 pF

Fig. 4 Typical values;

VCE = 28 V.

VBE <v)

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