FCI7N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCI7N60 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FCI7N60
Device
FCI7N60
Package
I2-PAK
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 250 μA, TC = 25oC
VGS = 0 V, ID = 250 μA, TC = 150oC
ID = 250 μA, Referenced to 25oC
VGS = 0 V, ID = 7 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 300 V, ID = 7 A
RG = 25 Ω
VDS = 480 V, ID = 7 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 7 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 7 A
dIF/dt = 100 A/μs
(Note 4)
Min.
600
-
-
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
650
0.6
700
-
-
-
-
0.53
6
710
380
34
22
60
35
55
75
32
23
4.2
11.5
-
-
-
360
4.5
Quantity
50
Max. Unit
-
V
-
V
-
V/oC
-
V
1
10
μA
±100 nA
5.0
V
0.6
Ω
-
S
920
pF
500
pF
-
pF
29
pF
-
pF
80
ns
120
ns
160
ns
75
ns
30
nC
5.5
nC
-
nC
7
A
21
A
1.4
V
-
ns
-
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.5 A, VDD = 50 V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300 μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2008 Fairchild Semiconductor Corporation
FCI7N60 Rev. C0
2
www.fairchildsemi.com
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