FCI7N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCI7N60 Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250μA
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 3.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
102 Operation in This Area
is Limited by R DS(on)
101
100
100 us
1 ms
10 ms
DC
Figure 10. Maximum Drain Current
vs. Case Temperature
10.0
7.5
5.0
* Notes :
10-1
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10-2
100
101
102
VDS, Drain-Source Voltage [V]
2.5
0.0
103
25
50
75
100
125
150
TC, Case Temperature [°C]
Figure 10. Transient Thermal Response Curve
100
D =0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
single pulse
1 0 -2
* N otes :
1. ZθJC(t) = 1.5 °C /W M ax.
2. D uty Factor, D =t1/t2
3. T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
©2008 Fairchild Semiconductor Corporation
FCI7N60 Rev. C0
4
www.fairchildsemi.com
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