2SC2482 Просмотр технического описания (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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производитель

2SC2482

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SC2482

2SC2482 TRANSISTOR (NPN)

D FEATURE

T Power dissipation

.,L PCM:

0.9 W (Tamb=25℃)

Collector current

ICM:

0.1 A

O Collector-base voltage

V(BR)CBO:

300 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA , IE=0

300

O Collector-emitter breakdown voltage

V(BR)CEO

IC= 3 mA , IB=0

300

R Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

7

T Collector cut-off current

ICBO

VCB= 240 V , IE=0

C Collector cut-off current

ICEO

VCB= 220 V , IB=0

Emitter cut-off current

IEBO

VEB= 7 V , IC=0

E DC current gain

hFE(1)

VCE=10 V, IC= 20mA

30

L Collector-emitter saturation voltage

VCE(sat)

IC= 10 mA, IB= 1 mA

E Base-emitter saturation voltage

WEJTransition frequency

VBE(sat)

IC= 10 mA, IB= 1 mA

VCE= 10 V, IC= 20mA

fT

50

f = 30MHz

MAX

1

5

1

150

1

1

UNIT

V

V

V

µA

µA

µA

V

V

MHz

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

30-90

90-150

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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