75N75-TF3-R Просмотр технического описания (PDF) - Unisonic Technologies

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75N75-TF3-R

80Amps, 75Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

75N75

Power MOSFET

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 2)

VSD

VGS = 0 V, IS = 80A

Continuous Source Current

IS

Pulsed Source Current (Note 1)

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR

IS = 80A, VDD = 25 V

QRR

dIF / dt = 100 A/µs

Note: 1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

MIN TYP MAX UNIT

1.5 V

80 A

320 A

132

ns

660

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-097.E

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