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Компоненты Описание
BYG22B(1998) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
BYG22B
(Rev.:1998)
Super Fast Silicon Mesa SMD Rectifier
Vishay Semiconductors
BYG22B Datasheet PDF : 5 Pages
1
2
3
4
5
BYG22
Vishay Telefunken
60
T
amb
= 125
°
C
50
100
°
C
40
75
°
C
30
50
°
C
20
10
0
0
94 9354
25
°
C
I
R
=0.5A, i
R
=0.125A
0.2
0.4
0.6
0.8 1.0
I
F
– Forward Current ( A )
Figure 5. Max. Reverse Recovery Charge vs.
Forward Current
1000
125K/W DC
100
t
p
/T=0.5
t
p
/T=0.2
10
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
Single Pulse
1
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
94 9339
t
p
– Pulse Length ( s )
Figure 6. Thermal Response
Document Number 86011
Rev. 3, 24-Jun-98
www.vishay.de
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