2SK3019 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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Компоненты Описание

производитель

2SK3019

N-channel MOSFET

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate MOSFETS

2SK3019 N-channel MOSFET

V(BR)DSS

30 V

RDS(on)MAX

8Ω@4V

13Ω@2.5V

ID

100mA

SOT-523

1. GATE

2. SOURCE

3. DRAIN

FEATURE

z Low on-resistance

z Fast switching speed

z Low voltage drive makes this device ideal for

Portable equipment

z Easily designed drive circuits

z Easy to parallel

MARKING

APPLICATION

z Interfacing , Switching

Equivalent Circuit

MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Symbol Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Continuous Drain Current

RθJA

Thermal Resistance, Junction-to-Ambient

PD

Power Dissipation

TJ

Junction Temperature

Tstg

Storage Temperature

Value

30

±20

0.1

833

0.15

150

-55~+150

Unit

V

V

A

℃ /W

W

℃

℃

www.cj-elec.com

1

D,Apr,2015

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