PN2484 Просмотр технического описания (PDF) - Fairchild Semiconductor
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PN2484 Datasheet PDF : 7 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
BVCEO
BVEBO
Collector-Emitter Breakdown
Voltage*
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 µA, IB = 0
IC = 10 mA, IE = 0
IC = 10 µA, IE = 0
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
60
V
60
V
6.0
V
10
nA
10
µA
10
nA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 1.0 µA, VCE = 5.0 V
IC = 10 µA, VCE = 5.0 V
IC = 100 µA, VCE = 5.0 V
IC = 100 µA, VCE = 5.0 V
TA = -55°C
IC = 500 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 1.0 mA, IB = 0.1 mA
IC = 100 µA, VCE = 5.0 V
30
100
500
175
20
200
250
800
0.35
V
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
VCB =5.0 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
IC = 10 µA, VCE = 5.0 V,
RS = 10k,f = 1.0 kHz,BW =200 Hz
6.0
pF
6.0
pF
3.0
dB
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