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Компоненты Описание
9014 Просмотр технического описания (PDF) - Nanjing International Group Co
Номер в каталоге
Компоненты Описание
производитель
9014
NPN Silicon Epitaxial Planar Transistor
Nanjing International Group Co
9014 Datasheet PDF : 5 Pages
1
2
3
4
5
9014
Characteristics at T
amb
=25
O
C
DC Current Gain
at V
CE
=5V, I
C
=1mA
Current Gain Group A
B
C
D
Collector Base Breakdown Voltage
at I
C
=100
μ
A
Collector Emitter Breakdown Voltage
at I
C
=1mA
Emitter Base Breakdown Voltage
at I
E
=100
μ
A
Collector Cutoff Current
at V
CB
=50V
Emitter Cutoff Current
at V
EB
=5V
Collector Saturation Voltage
at I
C
=100mA,I
B
=5mA
Base Saturation Voltage
at I
C
=100mA,I
B
=5mA
Gain Bandwidth Product
at V
CE
=5V,I
C
=10mA
Output Capacitance
at V
CB
=10V,f=1MHz
Noise Figure
at V
CE
=5V,I
C
=200
μ
A
at
f=1KHz,R
G
=2K
Ω
Symbol
h
FE
h
FE
h
FE
h
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
OB
NF
Min.
60
100
200
400
50
45
5
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
900
300
3.5
2
Max.
Unit
150
300
600
1000
-
-
-
50
50
600
-
-
6
-
-
-
-
V
V
V
nA
nA
mV
mV
MHz
Pf
10
dB
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