BC556 Просмотр технического описания (PDF) - Philips Electronics
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производитель
BC556 Datasheet PDF : 12 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BC556; BC557; BC558
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
BC556
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
IC = −2 mA; VCE = −5 V;
see Figs 2, 3 and 4
125
BC557; BC558
125
BC556A; BC557A; BC558A
125
BC556B; BC557B; BC558B
220
BC557C; BC558C
420
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
IC = −10 mA; IB = −0.5 mA; note 1
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V; note 2
IC = −10 mA; VCE = −5 V; note 2
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −10 mA; VCE = −5 V; f = 100 MHz
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
−
−
−600
−
−
−
100
−
−1
−
−
−
−
−
−
−
−60
−180
−750
−930
−650
−
3
10
−
2
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
−
10
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
1997 Mar 27
4
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