MPSA42 Просмотр технического описания (PDF) - Fairchild Semiconductor

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MPSA42

NPN High Voltage Amplifier

Fairchild Semiconductor 

MPSA42

MMBTA42

PZTA42

C

BE

TO-92

C

SOT-23

Mark: 1D

E

B

C

SOT-223

E

C

B

NPN High Voltage Amplifier

This device is designed for application as a video output to

drive color CRT and other high voltage applications. Sourced

from Process 48.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCES

Collector-Emitter Voltage

300

VCBO

Collector-Base Voltage

300

VEBO

Emitter-Base Voltage

6.0

IC

Collector Current - Continuous

500

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

MPSA42

*MMBTA42

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

625

350

5.0

2.8

83.3

RθJA

Thermal Resistance, Junction to Ambient

200

357

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

**PZTA42

1,000

8.0

125

Units

mW

mW /°C

°C/W

°C/W

 2000 Fairchild Semiconductor International

MPSA42/MMBTA42/PZTA42 Rev A

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