BCW67 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BCW67

PNP Silicon AF Transistors

Infineon Technologies 

BCW67, BCW68

Maximum Ratings

Parameter

Symbol

Value

Collector-emitter voltage

BCW67

BCW68

VCEO

32

45

Collector-base voltage

BCW67

BCW68

VCBO

45

60

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Peak base current

Total power dissipation, TS ≤ 79°C

Junction temperature

VEBO

5

IC

800

ICM

1

IB

100

IBM

200

Ptot

330

Tj

150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point1)

RthJS

≤ 215

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

A

mA

mW

°C

Unit

K/W

2

2011-09-15

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