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TIP112G

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Unisonic Technologies 

TIP112

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

DC

IC

Peak

ICM

2

A

4

Base Current (DC)

IB

50

mA

TO-126

10

Collector Dissipation

TO-220

PC

TO-252

40

W

15

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Collector-Base Cut-Off Current

Collector-Emitter Cut-Off Current

Emitter-Base Cut-Off Current

DC Current Gain

Collector Capacitance

SYMBOL

TEST CONDITIONS

VCEO(SUS) IC=30mA, IB=0A

VCE(SAT) IC=2A, IB=8mA

VBE(ON) VCE=4V, IC=2A

ICBO VCB=100V, IE=0A

ICEO VCE=50V, VB=0A

IEBO VEB=5V, IC=0A

hFE

VCE=4V, IC=1A

VCE=4V, IC=2A

COB VCB=10V, IE=0A, f=0.1MHz

MIN TYP MAX UNIT

100

V

2.5

V

2.8

1

mA

2

mA

2

mA

1000

500

100 pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R203-022.D

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