Philips Semiconductors
PNP general purpose transistors
Product specification
BCX17; BCX18
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Saturated switching and driver applications e.g. for
industrial service
• Thick and thin-film circuits.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
TYPE NUMBER
BCX17
BCX18
MARKING CODE(1)
T1∗
T2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCX17
BCX18
collector-emitter voltage
BCX17
BCX18
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−50
V
−
−30
V
−
−45
V
−
−25
V
−
−5
V
−
−500 mA
−
−1
A
−
−200 mA
−
250
mW
−65
+150 °C
−
150
°C
−65
+150 °C
1999 May 31
2