BUT12 Просмотр технического описания (PDF) - Philips Electronics
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BUT12 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
ICsat
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
BUT12
BUT12A
collector-emitter voltage
BUT12
BUT12A
collector saturation current
BUT12
BUT12A
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
VBE = 0
open base
see Figs 3 and 4
see Fig. 4
Tmb ≤ 25 °C; see Fig.2
Product specification
BUT12; BUT12A
MIN.
MAX.
UNIT
−
850
V
−
1 000
V
−
400
V
−
450
V
−
6
A
−
5
A
−
8
A
−
20
A
−
4
A
−
6
A
−
125
W
−65
+150
°C
−
150
°C
handbook1,2h0alfpage
Ptot max
(%)
80
MGD283
40
0
0
50
100 Tmb (oC) 150
Fig.2 Power derating curve.
10
handbook, halfpage
IC
(A)
5
MGB892
BUT12F
BUT12AF
0
0
400
800 VCE (V) 1200
VBE = −1 to −5 V; Tc = 100 °C.
Fig.3 Reverse bias SOAR.
1997 Aug 13
2
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