BUT12 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

BUT12

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT12; BUT12A

10

handbook, full pagewidth

Zth j−mb

(K/W)

1

10−1

δ=1

0.75

0.50

0.33

0.20

0.10

0.05

10−2

10−3

0.02

0.01

0

10−2

10−1

1

10

Fig.5 Transient thermal impedance.

MGB862

102

tp (ms)

103

handbook, halfpage

+ 50 V

100 to 200 Ω

L

horizontal

oscilloscope

vertical

6V

30 to 60 Hz

300 Ω

1Ω

MGE252

handbookI,Chalfpage

(mA)

250

200

100

0

MGE239

min VCE (V)

VCEOsust

Fig.6 Test circuit for collector-emitter

sustaining voltage.

1997 Aug 13

Fig.7 Oscilloscope display for collector-emitter

sustaining voltage.

5

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