BD239B Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
BD239B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD239/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD239
VCEO(SUS)
Collector-emitter
sustaining voltage
BD239A
BD239B
IC=30mA; IB=0
BD239C
VCEsat Collector-emitter saturation voltage
VBE
Base-emitter on voltage
IC=1 A;IB=0.2 A
IC=1A ; VCE=4V
BD239/A
VCE=30V; IB=0
ICEO
Collector cut-off current
BD239B/C VCE=60V; IB=0
BD239
VCE=45V; VBE=0
BD239A
VCE=60V; VBE=0
ICES
Collector cut-off current
BD239B
VCE=80V; VBE=0
BD239C
VCE=100V; VBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.2A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
MIN TYP. MAX UNIT
45
60
V
80
100
0.7
V
1.3
V
0.3
mA
0.2
mA
1
mA
40
15
2
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