IRFP254 Просмотр технического описания (PDF) - New Jersey Semiconductor
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IRFP254 Datasheet PDF : 2 Pages
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IRFP254
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
AV(BR)DSS/ATj Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to Source On-Resistance
Ves(th)
Gate Threshold Voltage
9*
Forward Transconductance
.
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q3
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgc,
Gate-to-Drain ("Miller") Charge
tr^ml
Turn-On Delay Time
t,
Rise Time
ttf(off)
Turn-Off Delay Time
tl
Fall Time
Lu
Internal Drain Inductance
Ls
Internal Source Inductance
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Test Conditions
250 — —
V VGS=OV, ln= 250nA
- 0.39 — v/°c Reference to 25°C, ID= 1mA
— 0.14 n VGs=10V, ID=14A ®
2.0 — 4.0 V VDS=VGS, lo= 250uA
11 — —
s VDS=50V, b=14A ®
—
—
25
\if\C VDS=250V, VGS=OV
— — 250
VDS=200V, VGS=OV: Tj=125°C
— — 100
VQS=20V
— — -100
VQS=-20V
— — 140
b=23A
— — 24
Vos=200V
— — 71
Vas=10V See Fig. 6 and 13®
— 15 —
Voo=125V
— 63 —
b=23A
— 74 —
Re=6.2n
.— 50 —
Ro=5.4n See Figure 10®
Between lead,
— 5.0 —
6 mm (0.25in.)
nH
— 13 —
and center of
die contact
|
/|T—5\m package
vL_Si
1
— 2700 —
VGS=OV
— 620 — pF VDS= 25V
= 180
-
/=1 .0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Is
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ®
Vso
Diode Forward Voltage
tr,
Reverse Recovery Time
Qr,
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Test Conditions
- - 23
— - 92
MOSFET symbol ^_^ I!
A showing the
integral reverse
r)
°Aj |LL
p-n junction diode.
S
1.8 V Tj=25°C, ls=23A, VGS=OV W
— 370 560 ns Tj=25°C, IF=23A
4.6 6.9 nc di/dt=100A/|is ®
Intrinsic turn-on time is neglegtble (turn-on is dominated by Ls+Lu}
J HI T)
Notes:
® Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
' VoD=50V, starting Tj=25°C, L=1.2mH
Ro=25n, lAS=23A (See Figure 12)
® ISDS23A, di/dt<180A/us, VDD<V(BH)DSS,
Tj<150°C
® Pulse width < 300 u.s; duty cycle <2%.
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