BD135 Просмотр технического описания (PDF) - Inchange Semiconductor
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BD135 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
DESCRIPTION
·
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
BD135
VCBO
Collector-base voltage BD137
BD139
BD135
VCEO
Collector-emitter voltage BD137
BD139
VEBO
Emitter -base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IBM
Base current-Peak
Pt
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Tamb
Operating ambient temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb≤70℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
℃
VALUE
100
10
UNIT
K/W
K/W
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