2SD2136-P-T60-K(2009) Просмотр технического описания (PDF) - Unisonic Technologies
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2SD2136-P-T60-K Datasheet PDF : 4 Pages
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2SD2136
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Peak Collector Current
ICP
5
A
Collector Dissipation
PC
1.5
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified )
PARAMETER
Collector-Base Breakdown Voltage
Collect Cutoff Current
Collect Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
SYMBOL
BVCEO
ICEO
ICES
IEBO
hFE1
hFE2
VCE(SAT)
VBE
fT
tON
tS
tF
CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=30mA, IB=0
VCE=60V, IB=0
VCE=60 V, VBE=0
VBE=6 V, IC=0
VCE=4V ,IC=1A
VCE=4V ,IC=3A
IC =3A, IB=0.375A
VCE=4V ,IC=3A
VCE=15V, IE=0.1A, f =200MHz
IC = 1A, IB1 =0.1A, IB2 =0.1A
MIN TYP MAX UNIT
60
V
300 µA
200 µA
1 mA
40
250
10
1.2 V
1.8 V
220
MHZ
0.5
µS
2.5
µS
0.4
µS
RANK
RANGE
P
40-90
Q
70-150
R
120-250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-011.B
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