FDP6644S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP6644S Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
10
ID = 28A
8
VDS = 10V
15V
20V
6
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
100µs
10ms
100ms
1s
10s
DC
10
VGS = 10V
SINGLE PULSE
RθJC = 2.1oC/W
TA = 25oC
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
CISS
f = 1MHz
VGS = 0 V
1600
800
COSS
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
800
600
SINGLE PULSE
RθJC = 2.1°C/W
TA = 25°C
400
200
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
Figure 11. Transient Thermal Response Curve.
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
100
1000
FDP6644S/FDB6644S Rev C1 (W)
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