BD137 Просмотр технического описания (PDF) - Unisonic Technologies
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BD137 Datasheet PDF : 3 Pages
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BD137
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1.5
A
Peak Collector Current
ICM
3.0
A
Peak Base Current
lBM
0.5
A
Power Dissipation (TA=25°C)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Voltage (Note)
Collector Cut-Off Current
VCEO
ICBO
IC=30mA, IB=0
IE=0, VCB=30V
IE=0, VCB=30V, TJ=125°C
Emitter Cut-Off Current
IEBO
IC=0, VEB=5V
IC=5mA
DC Current Gain (Note)
VCE=2V
IC=150mA
hFE
IC=500mA
DC Current Gain (Note)
BD137-6
BD137-10
IC=150mA, VCE=2V
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=500mA, IB=50mA
Base-Emitter Voltage (Note)
VBE
IC=500mA, VCE=2V
Transition Frequency
fT
IC=500mA, VCE=5V, f=100MHz
Note: Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2%.
MIN TYP MAX UNIT
60
V
100 nA
10 μA
10 μA
25
40
160
25
40
100
63
160
0.5 V
1V
190
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R204-033.a
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