AOD407 Просмотр технического описания (PDF) - shenzhen wanhexing Electronics Co.,Ltd

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AOD407

P-Channel Enhancement Mode Field Effect Transistor

shenzhen wanhexing Electronics Co.,Ltd 

万和兴电子有限公司 www.whxpcb.com

AOD407

P-Channel Enhancement Mode Field Effect Transistor

General Description

The AOD407 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications.

-RoHS Compliant

-Halogen Free*

Features

VDS (V) = -60V

ID = -12A (VGS = -10V)

RDS(ON) < 115mΩ (VGS = -10V)

RDS(ON) < 150mΩ (VGS = -4.5V)

100% UIS tested

100% RG tested

Top View

TO252

DPAK

Bottom View

D

D

S

G

G

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TC=25°C

Current G

TC=100°C

ID

Pulsed Drain Current C

IDM

Avalanche Current C

IAR

Repetitive avalanche energy L=0.1mH C

EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum

-60

±20

-12

-10

-30

-12

23

50

25

2.5

1.6

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

16.7

40

25

50

Maximum Junction-to-Case B

Steady-State

RθJC

2.5

3

Alpha & Omega Semiconductor, Ltd.

Units

V

V

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

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