BT236X Просмотр технического описания (PDF) - Philips Electronics
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BT236X Datasheet PDF : 12 Pages
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Philips Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
3. Ordering information
Table 2: Ordering information
Type number Package
Name
Description
Version
BT236X-600
BT236X-600F
3-lead
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
BT236X-600G
BT236X-800
BT236X-800G
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 88 °C; see
Figure 4 and 5
ITSM
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
IGM
VGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−40
-
Max Unit
600
V
600
V
600
V
800
V
800
V
6
A
65
A
71
A
21
A2s
50
50
50
10
2
5
5
0.5
+150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BT236X_SER_F_G_2
Product data sheet
Rev. 02 — 14 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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