PBSS5350X Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS5350X Datasheet PDF : 13 Pages
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NXP Semiconductors
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
PBSS5350X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICES
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
RCEsat
VBEsat
VBEon
fT
Cc
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CONDITIONS
VCB = −50 V; IE = 0 A
VCB = −50 V; IE = 0 A; Tj = 150 °C
VCE = −50 V; VBE = 0 V
VEB = −5 V; IC = 0 A
VCE = −2 V
IC = −0.1 A
IC = −0.5 A
IC = −1 A; note 1
IC = −2 A; note 1
IC = −3 A; note 1
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −100 mA
IC = −2 A; IB = −200 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA; note 1
VCE = −2 V; IC = −1 A
IC = −100 mA; VCE = −5 V;
f = 100 MHz
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
MIN.
−
−
−
−
200
200
200
130
80
−
−
−
−
−
−
−
−
−1.1
100
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
−
−
−
−
−
MAX. UNIT
−100 nA
−50 μA
−100 nA
−100 nA
−
−
450
−
−
−90
−180
−320
−270
−390
135
−1.1
−1.2
−
−
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 04
7
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