KSD5018 Просмотр технического описания (PDF) - Inchange Semiconductor
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KSD5018 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
KSD5018
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CEO= 275V(Min)
·Built-in Resistor Between Base and Emitter
·Wide Area of Safe Operation
APPLICATIONS
·Designed for motor drive and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
275
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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