BDX63(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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производитель

BDX63
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX63 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

Fhfe

Cut-off frequency

fT

Transition Frequency

hFE

D.C. current gain (*)

BDX63

VCE=3 V

IC=3 A

BDX63A

BDX63B

- 100 - kHz

BDX63C

BDX63

VCE=3 V, IC=3 A BDX63A

f=1 MHz

BDX63B

-

7

- MHz

BDX63C

BDX63

VCE=3 V

IC=0.5 A

BDX63A

BDX63B

- 2500 -

BDX63C

BDX63

VCE=3 V

IC=3 A

BDX63A

BDX63B

1000

-

-

-

BDX63C

BDX63

VCE=3 V

IC=8 A

BDX63A

BDX63B

- 2600 -

BDX63C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

24/10/2012

COMSET SEMICONDUCTORS

3|4

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