DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q67000-A8118 Просмотр технического описания (PDF) - Siemens AG

Номер в каталоге
Компоненты Описание
производитель
Q67000-A8118 Datasheet PDF : 50 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TLE 4211
Characteristics (cont’d)
VS = 6 to 18 V and TA = – 40 to 125 °C
Parameter
Symbol Limit Values Unit
min. typ. max.
Test Condition
Power Output
Saturation voltage
Leakage current
Switch-ON time
Switch-OFF time
Output voltage
Negative clamp
VQSat
IQ
tD ON
tD OFF
VQF
0.6 0.8 V
300 µA
0.5 5
µs
2.5 10 µs
1.4 1.8 V
IQ = 1.6 A; VI < VIL;
Tj = 25 °C
VQ = 6 V; VI > VIH
see Timing Diagram;
IQ = 1 A
IQ = – 2.0 A
Power Clamp Diode (VS = 42 V; S1 open)
Output voltage
positive clamp
VQZ
34 36 40 V
Serial resistance
rz
2
IQ = 0.1 A
0 A < IQ < 2 A
Semiconductor Group
9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]