S9016 Просмотр технического описания (PDF) - Diode Semiconductor Korea

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производитель

S9016

NPN Silicon Epitaxial Planar Transistor

Diode Semiconductor Korea 

Diode Semiconductor Korea

NPN Silicon Epitaxial Planar Transistor

S9016

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP

Collector-base breakdown voltage

V(BR)CBO IC=100μA,IE=0

30

Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0

20

MAX

UNIT

V

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

4

V

Collector cut-off current

Emitter cut-off current

ICBO

IEBO

VCB=30V,IE=0

VEB=3V,IC=0

0.1 μA

0.1 μA

DC current gain

hFE

VCE=5V,IC=1mA

28 90 198

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB= 1mA

0.1 0.3 V

Base-emitter on voltage

VBE(on)

VCE=5V, IC=1mA

0.72

Transition frequency

fT

VCE=5V, IC= 1mA

400 620

Output capacitance

VCB=10V,

Cob

IE=0,f=1MHz

1.2 1.6

Noise figure

VCE=5V,IC=1.0,

NF

f=100MHz,RS=50Ω

1.2 1.6

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

V

MHz

pF

pF

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