FQU2N60CTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQU2N60CTU Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
12
10
8
VGS = 10V
6
4
VGS = 20V
2
※ Note : TJ = 25℃
0
0
1
2
3
4
5
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
500
450
400
350
300
250
200
150
100
50
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
100
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 2A
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
©2003 Fairchild Semiconductor Corporation
3
FQD2N60C / FQU2N60C Rev.1.4
www.fairchildsemi.com
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