2N5615 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2N5615

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lo= -50mA ; IB= 0

VcE(sat)

Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VeE(sat) Base-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

ICBO

Collector Cutoff Current

VCB=-100V;IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0 .

hFE

DC Current Gain

lc= -2.5A ; VCE= -5V

fr

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V

2N5615

MIN MAX UNIT

-80

V

-1.5

V

-2.2

V

-1.0

mA

-0.1

mA

-0.1

mA

30

90

50

MHz

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