FZT757(1996) Просмотр технического описания (PDF) - Diodes Incorporated.
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Компоненты Описание
производитель
FZT757 Datasheet PDF : 2 Pages
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FZT757
250
200
150
100
TYPICAL CHARACTERISTICS
IC/IB=10
td
tr
ts tf
µs µs
4 1.6
1.4
3 1.2
ts
1.0
2 0.8
0.6
td
0.0001
0.001
0.01
0.1
1
1 0.4
tf
0.2
tr
0
0.01
0.1
IB 1=IB 2=IC /10
VC E=10V
tf
tr
ts
td
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
80
60
40
VCE=5V
20
0
0.0001
0.001
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
1.2
1.0
0.8
VCE=5V
0.6
0.4
0.0001
0.001
0.01
0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
1.2
1.0
IC/IB=10
0.8
0.6
0.4
0.0001
0.001
0.01
0.1
1
IC - Collector Current (Amps)
VBE(sat) v IC
1
Single Pulse Test at Tamb=25°C
0.1
0.01
DC
100ms
10ms
1ms
300µs
0.001
1
10
100
1000
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 241
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