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BBY35F Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
BBY35F
Silicon Tuning Varactor
Siemens AG
BBY35F Datasheet PDF : 2 Pages
1
2
BBY 35 F
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
I
R
= 10
µ
A
Reverse current
V
R
= 20 V
Diode capacitance
V
R1
= 4 V,
f
= 1 MHz
V
R2
= 20 V,
f
= 1 MHz
Capacitance ratio
V
R1
= 4 V,
V
R2
= 20 V
Figure of merit
V
R
= 4 V,
f
= 50 MHz
Symbol
min.
V
(BR)
22
Values
typ. max.
–
–
Unit
V
I
R
–
–
10 nA
C
T
pF
8.5 –
10
2.1 –
2.4
C
T4
3.5 –
–
–
C
T20
Q
250 350 –
–
Semiconductor Group
2
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